ATP A4G04QA8BLRCSE memory module 4 GB 1 x 4 GB DDR4 2400 MHz

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In stock
4 GB, DDR4, 2400 MHz, unbuffered, SODIMM, Non-ECC
SKU
A4G04QA8BLRCSE
UNSPSC: 43201402
Power
Memory voltage1.2 V
Memory
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 4 GB
Internal memory4 GB
Component forLaptop
Memory form factor260-pin SO-DIMM
Memory voltage1.2 V
Lead platingGold
ECCNo
Memory clock speed2400 MHz
Internal memory typeDDR4
Features
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 4 GB
Internal memory4 GB
Component forLaptop
Memory form factor260-pin SO-DIMM
Memory voltage1.2 V
Lead platingGold
ECCNo
Memory clock speed2400 MHz
Internal memory typeDDR4
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-40 - 95 °C
SKU A4G04QA8BLRCSE
Specification
Power
Memory voltage1.2 V
Memory
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 4 GB
Internal memory4 GB
Component forLaptop
Memory form factor260-pin SO-DIMM
Memory voltage1.2 V
Lead platingGold
ECCNo
Memory clock speed2400 MHz
Internal memory typeDDR4
Features
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 4 GB
Internal memory4 GB
Component forLaptop
Memory form factor260-pin SO-DIMM
Memory voltage1.2 V
Lead platingGold
ECCNo
Memory clock speed2400 MHz
Internal memory typeDDR4
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-40 - 95 °C
Manufacturer ATP
In Stock Y