Kingston Technology KSM26RS8/8HDI memory module 8 GB 1 x 8 GB DDR4 2666 MHz ECC

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8GB, DDR4, 1Rx8, 1G x 72-Bit, PC4-2666, CL19
SKU
KSM26RS8/8HDI
UNSPSC: 43201402
Kingston's KSM26RS8/8HDI is a 1G x 72-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) registered w/ parity, 1Rx8, ECC, memory module, based on nine 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers.
Power
Memory voltage1.2 V
Design
JEDEC standardYes
Technical details
Country of originTaiwan
Compliance certificatesRoHS
Memory
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency19
Memory voltage1.2 V
Lead platingGold
Module configuration1024M x 72
Row cycle time46.25 ns
Refresh row cycle time350 ns
Row active time32 ns
ECCYes
Memory clock speed2666 MHz
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
Features
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency19
Memory voltage1.2 V
Lead platingGold
Module configuration1024M x 72
Row cycle time46.25 ns
Refresh row cycle time350 ns
Row active time32 ns
Country of originTaiwan
ECCYes
Memory clock speed2666 MHz
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
JEDEC standardYes
Harmonized System (HS) code84733020
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Logistics data
Harmonized System (HS) code84733020
Other features
Country of originTaiwan
Harmonized System (HS) code84733020
SKU KSM26RS8/8HDI
EAN 0740617308204
Specification
Power
Memory voltage1.2 V
Design
JEDEC standardYes
Technical details
Country of originTaiwan
Compliance certificatesRoHS
Memory
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency19
Memory voltage1.2 V
Lead platingGold
Module configuration1024M x 72
Row cycle time46.25 ns
Refresh row cycle time350 ns
Row active time32 ns
ECCYes
Memory clock speed2666 MHz
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
Features
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency19
Memory voltage1.2 V
Lead platingGold
Module configuration1024M x 72
Row cycle time46.25 ns
Refresh row cycle time350 ns
Row active time32 ns
Country of originTaiwan
ECCYes
Memory clock speed2666 MHz
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
JEDEC standardYes
Harmonized System (HS) code84733020
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Logistics data
Harmonized System (HS) code84733020
Other features
Country of originTaiwan
Harmonized System (HS) code84733020
Manufacturer Kingston Technology
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In Stock Y