Kingston Technology KSM32RS8/8MEI memory module 8 GB 1 x 8 GB DDR4 3200 MHz ECC

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8GB, DDR4, 3200MHz, ECC, CL22, X8, 1.2V, Registered, DIMM, 288-pin
SKU
KSM32RS8/8MEI
UNSPSC: 43201402
Kingston's KSM32RS8/8MEI is a 1G x 72-bit (8GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) registered w/ parity, 1Rx8, ECC, memory module, based on nine 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers.
Power
Memory voltage1.2 V
Design
JEDEC standardYes
Memory
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency22
Memory voltage1.2 V
Lead platingGold
Module configuration1024M x 72
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
ECCYes
Memory clock speed3200 MHz
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
Features
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency22
Memory voltage1.2 V
Lead platingGold
Module configuration1024M x 72
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
ECCYes
Memory clock speed3200 MHz
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
JEDEC standardYes
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Compliance certificatesRoHS
Weight & dimensions
Width133.3 mm
Height31.2 mm
SKU KSM32RS8/8MEI
EAN 0740617295931
Specification
Power
Memory voltage1.2 V
Design
JEDEC standardYes
Memory
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency22
Memory voltage1.2 V
Lead platingGold
Module configuration1024M x 72
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
ECCYes
Memory clock speed3200 MHz
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
Features
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency22
Memory voltage1.2 V
Lead platingGold
Module configuration1024M x 72
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
ECCYes
Memory clock speed3200 MHz
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
JEDEC standardYes
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Compliance certificatesRoHS
Weight & dimensions
Width133.3 mm
Height31.2 mm
Manufacturer Kingston Technology
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