Kingston Technology ValueRAM KVR26S19S6/4 memory module 4 GB 1 x 4 GB DDR4 2666 MHz

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4GB, DDR4, 260-Pin SODIMM
SKU
KVR26S19S6/4
UNSPSC: 43201402
This document describes ValueRAM's KVR26S19S6/4 as a 512M x 64-bit (4GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx16, memory module, based on four 512M x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin SODIMM uses gold contact fingers.
Power
Memory voltage1.2 V
Technical details
Country of originTaiwan
Doesn't containHalogen
Compliance certificatesRoHS
Memory
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 4 GB
Internal memory4 GB
Component forLaptop
Memory form factor260-pin SO-DIMM
CAS latency19
Memory voltage1.2 V
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Memory ranking1
ECCNo
Memory clock speed2666 MHz
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
Features
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 4 GB
Internal memory4 GB
Component forLaptop
Memory form factor260-pin SO-DIMM
CAS latency19
Memory voltage1.2 V
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Country of originTaiwan
Memory ranking1
ECCNo
Memory clock speed2666 MHz
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
Harmonized System (HS) code84733020
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Sustainability
Doesn't containHalogen
Weight & dimensions
Width69.6 mm
Depth2.45 mm
Height30 mm
Logistics data
Harmonized System (HS) code84733020
Other features
Country of originTaiwan
Harmonized System (HS) code84733020
SKU KVR26S19S6/4
EAN 0740617280647
Specification
Power
Memory voltage1.2 V
Technical details
Country of originTaiwan
Doesn't containHalogen
Compliance certificatesRoHS
Memory
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 4 GB
Internal memory4 GB
Component forLaptop
Memory form factor260-pin SO-DIMM
CAS latency19
Memory voltage1.2 V
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Memory ranking1
ECCNo
Memory clock speed2666 MHz
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
Features
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 4 GB
Internal memory4 GB
Component forLaptop
Memory form factor260-pin SO-DIMM
CAS latency19
Memory voltage1.2 V
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Country of originTaiwan
Memory ranking1
ECCNo
Memory clock speed2666 MHz
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
Harmonized System (HS) code84733020
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Sustainability
Doesn't containHalogen
Weight & dimensions
Width69.6 mm
Depth2.45 mm
Height30 mm
Logistics data
Harmonized System (HS) code84733020
Other features
Country of originTaiwan
Harmonized System (HS) code84733020
Manufacturer Kingston Technology
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