Samsung 8GB DDR4 memory module 1 x 8 GB 2133 MHz

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8GB DDR4, 2133MHz, CL15, 1.2V
SKU
M393A1G40DB0-CPB
UNSPSC: 43201402
Samsung DDR4 Registered DIMMs (or RDIMMs) are designed with an additional hardware register between the DRAM module and the system’s memory controller. RDIMMs present several advantages for the system, such as a lower electrical load on the memory controller and sustained stability even with an increase in the number of installed memory modules. Thus, RDIMMs are often the default choice for deployment in server-class computing systems.
In addition to Registered DIMM’s features, Samsung DDR4 memory is available as Registered DIMM that it provides an optimized solution for highly virtualized environments, high-performance computing and networking. Semiconductor modules of Samsung DDR4 are designed with new system circuit architecture to deliver higher performance with low power requirements than previously available memory products. Doubled bandwidth, along with reduced voltage and dramatically lower power consumption, improves performance and optimizes the total cost of ownership.
Power
Memory voltage1.2 V
Memory
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency15
Memory voltage1.2 V
Memory ranking1
Memory clock speed2133 MHz
Internal memory typeDDR4
Features
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency15
Memory voltage1.2 V
Memory ranking1
Memory clock speed2133 MHz
Internal memory typeDDR4
Technical details
Doesn't containHalogen
Sustainability
Doesn't containHalogen
Weight & dimensions
Width133.3 mm
Height30 mm
SKU M393A1G40DB0-CPB
EAN 6720420861466
Specification
Power
Memory voltage1.2 V
Memory
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency15
Memory voltage1.2 V
Memory ranking1
Memory clock speed2133 MHz
Internal memory typeDDR4
Features
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency15
Memory voltage1.2 V
Memory ranking1
Memory clock speed2133 MHz
Internal memory typeDDR4
Technical details
Doesn't containHalogen
Sustainability
Doesn't containHalogen
Weight & dimensions
Width133.3 mm
Height30 mm
Manufacturer Samsung
In Stock N