Samsung M393A2G40EB2-CTD memory module 16 GB 1 x 16 GB DDR4 2666 MHz

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In stock
16GB DDR4, 2666 MHz, CL19, 1.2V
SKU
M393A2G40EB2-CTD
UNSPSC: 43201402
Samsung DDR4 Registered DIMMs (or RDIMMs) are designed with an additional hardware register between the DRAM module and the system’s memory controller. RDIMMs present several advantages for the system, such as a lower electrical load on the memory controller and sustained stability even with an increase in the number of installed memory modules. Thus, RDIMMs are often the default choice for deployment in server-class computing systems.

In addition to Registered DIMM’s features, Samsung DDR4 memory is available as Registered DIMM that it provides an optimized solution for highly virtualized environments, high-performance computing and networking. Semiconductor modules of Samsung DDR4 are designed with new system circuit architecture to deliver higher performance with low power requirements than previously available memory products. Doubled bandwidth, along with reduced voltage and dramatically lower power consumption, improves performance and optimizes the total cost of ownership. Samsung DDR4's enhanced reliability, availability and serviceability (RAS) features provide enhanced reliability and improved signal integrity (S/I).
Power
Memory voltage1.2 V
Memory
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 16 GB
Internal memory16 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency19
Memory voltage1.2 V
Module configuration2048M x 72
Memory ranking2
Memory clock speed2666 MHz
Internal memory typeDDR4
Features
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 16 GB
Internal memory16 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency19
Memory voltage1.2 V
Module configuration2048M x 72
Memory ranking2
Memory clock speed2666 MHz
Internal memory typeDDR4
Operational conditions
Operating temperature (T-T)0 - 85 °C
Weight & dimensions
Height31.2 mm
SKU M393A2G40EB2-CTD
EAN 5706998985361
Specification
Power
Memory voltage1.2 V
Memory
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 16 GB
Internal memory16 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency19
Memory voltage1.2 V
Module configuration2048M x 72
Memory ranking2
Memory clock speed2666 MHz
Internal memory typeDDR4
Features
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 16 GB
Internal memory16 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency19
Memory voltage1.2 V
Module configuration2048M x 72
Memory ranking2
Memory clock speed2666 MHz
Internal memory typeDDR4
Operational conditions
Operating temperature (T-T)0 - 85 °C
Weight & dimensions
Height31.2 mm
Manufacturer Samsung
In Stock Y