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Power | |
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Memory voltage | 1.2 V |
Design | |
Compatible products | 20 series:RS820RP+, RS820+, DS920+, DS720+, DS420+, DS220+ 19 series:DS2419+, DS2419+II, DS1819+, DVA3219 18 series:DS1618+ |
Technical details | |
Country of origin | Taiwan |
Memory | |
---|---|
Buffered memory type | Unregistered (unbuffered) |
Memory layout (modules x size) | 1 x 4 GB |
Internal memory | 4 GB |
Memory form factor | 260-pin SO-DIMM |
Memory voltage | 1.2 V |
ECC | No |
Memory clock speed | 2666 MHz |
Internal memory type | DDR4 |
Features | |
Buffered memory type | Unregistered (unbuffered) |
Compatible products | 20 series:RS820RP+, RS820+, DS920+, DS720+, DS420+, DS220+ 19 series:DS2419+, DS2419+II, DS1819+, DVA3219 18 series:DS1618+ |
Memory layout (modules x size) | 1 x 4 GB |
Internal memory | 4 GB |
Memory form factor | 260-pin SO-DIMM |
Memory voltage | 1.2 V |
Country of origin | Taiwan |
ECC | No |
Memory clock speed | 2666 MHz |
Internal memory type | DDR4 |
Harmonized System (HS) code | 84733020 |
Logistics data | |
Harmonized System (HS) code | 84733020 |
Other features | |
Country of origin | Taiwan |
Harmonized System (HS) code | 84733020 |
SKU | D4NESO-2666-4G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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EAN | 4711174723669 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Specification |
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Manufacturer | Synology | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
In Stock | Y |